APTM50HM35FG APTM50HM35FG ? rev 2 july, 2006 www.microsemi.com 1 ? 6 s4 g4 s3 q3 g3 g1 q1 q4 0/vbus vb us out2 out1 g2 q2 s2 s1 s4 g4 g2 s2 vbus 0/vbus s1 g1 s3 out1 out2 g3 absolute maximum ratings these devices are sensitive to electrostatic discharge. proper handing procedures should be followed . see application note apt0502 on www.microsemi.com s ymbol parameter max ratings unit v dss drain - source breakdown voltage 500 v t c = 25c 99 i d continuo us drain current t c = 80c 74 i dm pulsed drain current 396 a v gs gate - source voltage 30 v r dson drain - source on resistance 39 m ? p d maximum power dissipation t c = 25c 781 w i ar avalanche current (repetitive and non repetitive) 51 a e ar repetitive avalanche energy 50 e as single pulse avalanche energy 3000 mj v dss = 500v r dson = 35m ? typ @ tj = 25c i d = 99a @ tc = 25c applicatio n ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? power mos 7 ? fredfets - low r dson - low input and miller capacitance - low gate c harge - fast intrinsic reverse diode - avalanche energy rated - very rugged ? kelvin source for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration benefits ? outsta ndi ng perfor ma nce at hi gh freq ue nc y operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? low profile ? rohs compliant f ull - bridge mosfet power module
APTM50HM35FG APTM50HM35FG ? rev 2 july, 2006 www.microsemi.com 2 ? 6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 500v t j = 25c 200 i dss zero gate voltage drain current v gs = 0v,v ds = 400v t j = 125c 1000 a r ds(on) drain ? source on resistance v gs = 10v, i d = 49.5a 35 39 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 5ma 3 5 v i gs s gate ? source leakage current v gs = 30 v, v ds = 0v 150 na dynamic characteristics symbol characteristic test conditions min typ max unit c is s input capacitance 14 c oss output capacitance 2.8 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 0.2 nf q g total gate charge 280 q gs gate ? source charge 80 q gd gate ? drain charge v gs = 10v v bus = 250v i d = 99a 140 nc t d(on) tur n-o n delay ti me 21 t r rise time 38 t d(off) turn-off delay time 75 t f fall time inductive switching @ 125c v gs = 15v v bus = 333v i d = 99a r g = 1 ? 93 ns e on turn-on switching energy 2070 e off turn-off switching energy inductive switching @ 25c v gs = 15v, v bus = 333v i d = 99a, r g = 1 ? 1690 j e on turn-on switching energy 3112 e off turn-off switching energy inductive switching @ 125c v gs = 15v, v bus = 333v i d = 99a, r g = 1 ? 2026 j source - drain diode ratings and characteristics symbol characteristic test conditions min typ max unit tc = 25c 99 i s continuo us so urce c urrent (body diode) tc = 80c 74 a v sd diode forward voltage v gs = 0v, i s = - 99a 1.3 v dv/dt peak diode recovery x 15 v/ns t j = 25c 270 t rr reverse recovery time t j = 125c 540 ns t j = 25c 5.2 q rr reverse recovery charge i s = - 99a v r = 333v di s /dt = 200a/s t j = 125c 19.2 c x dv/dt numbers reflect the limitations of the circuit rather than the device itself. i s - 99a di/dt 700a/s v r v dss t j 150c
APTM50HM35FG APTM50HM35FG ? rev 2 july, 2006 www.microsemi.com 3 ? 6 thermal and package characteristics symbol characteristic min typ max unit r thjc junction to case thermal resistance 0.16 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for terminals m5 2 3.5 n.m wt package weight 280 g sp6 package outline (dimensions in mm) see application note apt0601 - mounting instructions for sp6 power modules on www.microsemi.com
APTM50HM35FG APTM50HM35FG ? rev 2 july, 2006 www.microsemi.com 4 ? 6 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 5v 5.5v 6v 6.5v 7v 8v 0 100 200 300 400 0 5 10 15 20 25 v ds , drain to source voltage (v) i d , drain current (a) v gs =10&15v low voltage output characteristics transfert characteristics t j =-55c t j =25c t j =125c 0 50 100 150 200 250 300 02468 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds (on) vs drain current v gs =10v v gs =20v 0.9 0.95 1 1.05 1.1 0 20406080100120 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 49.5a 0 10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature
APTM50HM35FG APTM50HM35FG ? rev 2 july, 2006 www.microsemi.com 5 ? 6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage (normalized) on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d =49.5a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50-25 0 255075100125150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area 10 ms 1 ms 100 us 100 ms 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limite d by r dson single pulse t j =150c t c =25c ciss crss coss 10 100 1000 10000 100000 0 1020304050 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =100v v ds =250v v ds =400v 0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 350 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =99a t j =25c
APTM50HM35FG APTM50HM35FG ? rev 2 july, 2006 www.microsemi.com 6 ? 6 delay times vs current td(on) td(off) 10 20 30 40 50 60 70 80 0 20 40 60 80 100 120 140 160 i d , drain current (a) t d(on) and t d(off) (ns) v ds =333v r g =1 ? t j =125c l=100 h rise and fall times vs current t r t f 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 i d , drain current (a) t r and t f (ns) v ds =333v r g =1 ? t j =125c l= 100h switching energy vs current e on e off 0 1 2 3 4 5 6 0 20 40 60 80 100 120 140 160 i d , drain current (a) switching energy (mj) v ds =333v r g =1 ? t j =125c l=100h e on e off e off 0 2 4 6 8 10 0 5 10 15 20 25 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =333v i d =99a t j =125c l=100h hard switching zc s zvs 0 50 100 150 200 250 300 350 400 450 10 20 30 40 50 60 70 80 90 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =333v d=50% r g =1 ? t j =125c t c =75c t j =25c t j =150c 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage m icros e mi re se rve s the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in microsemi's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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